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GenX3TM 1200V IGBTs
Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching
IXGA20N120A3 IXGP20N120A3 IXGH20N120A3
VCES = 1200V IC110 = 20A VCE(sat) 2.5V
TO-263 AA (IXGA)
G E C (Tab)
Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md FC TL TSOLD Weight
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Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 25C TC = 110C TC = 25C, 1ms VGE = 15V, TJ = 125C, RG = 10 Clamped Inductive Load TC = 25C
Maximum Ratings 1200 1200 20 30 40 20 120 ICM = 40 @VCE 960 180 -55 ... +150 150 -55 ... +150 V V V V A A A A V W C C C Nm/lb.in. N/lb. C C g g g
TO-220AB (IXGP)
G
CE
C (Tab)
TO-247 (IXGH)
G
C
E
C (Tab)
Mounting Torque (TO-247 & TO-220) Mounting Force (TO-263) Maximum Lead Temperature for Soldering 1.6mm (0.062 in.) from Case for 10s TO-263 TO-220 TO-247
1.13/10 10..65 / 2.2..14.6 300 260 2.5 3.0 6.0
G = Gate E = Emitter
C = Collector Tab = Collector
Features Optimized for Low Conduction Losses International Standard Packages Advantages High Power Density Low Gate Drive Requirement Applications
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250A, VGE = 0V = 250A, VCE = VGE TJ = 125C VCE = 0V, VGE = 20V IC = 20A, VGE = 15V, Note 1 TJ = 125C
Characteristic Values Min. Typ. Max. 1200 2.5 5.0 25 1 100 2.3 2.5 2.5 V V A mA nA V V
VCE = VCES, VGE = 0V
Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits
(c) 2009 IXYS CORPORATION, All Rights Reserved
DS100046A(11/09)
IXGA20N120A3 IXGP20N120A3 IXGH20N120A3
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK Inductive Load, TJ = 125C IC = 20A, VGE = 15V VCE = 960V, RG = 10 Note 2 Inductive Load, TJ = 25C IC = 20A, VGE = 15V VCE = 960V, RG = 10 Note 2 IC = 20A, VGE = 15V, VCE = 0.5 * VCES IC = 20A, VCE = 10V, Note 1 VCE = 25V, VGE = 0V, f = 1MHz Characteristic Values Min. Typ. Max. 7 12 1075 80 27 50 7.3 23 16 44 2.85 290 715 6.47 16 50 5.53 310 1220 10.10 0.50 0.21 S pF pF pF nC nC nC ns ns mJ ns ns mJ ns ns mJ ns ns mJ 0.69 C/W C/W C/W TO-220 (IXGP) Outline TO-247 (IXGH) AD Outline
1 = Gate 2 = Collector 3 = Emitter Tab = Collector
TO-220 TO-247
Notes:
1. Pulse test, t 300s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
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TO-263 (IXGA) Outline
Pins:
1 - Gate 3 - Emitter
2 - Collector 4 - Collector
1 = Gate 2 = Collector 3 = Emitter Tab = Collector
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXGA20N120A3 IXGP20N120A3 IXGH20N120A3
Fig. 1. Output Characteristics @ T J = 25C
40 35 30 VGE = 15V 13V 11V 140 VGE = 15V 120 100
Fig. 2. Extended Output Characteristics @ T J = 25C
IC - Amperes
IC - Amperes
25 9V 20 15 7V 10 5 5V 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6
13V
80 11V 60 40 20 7V 0 0 4 8 12 16 20 24 28 32 9V
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics @ T J = 125C
40 35 30 VGE = 15V 13V 11V 1.8 VGE = 15V 1.6
Fig. 4. Dependence of VCE(sat) on Junction Temperature
I
C
= 40A
VCE(sat) - Normalized
IC - Amperes
25 20 15 10 5 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 9V
1.4
1.2 I 1.0
C
= 20A
7V
0.8 5V 0.6 -50 -25 0 25 50 75 100 125 150 I
C
= 10A
VCE - Volts
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TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage
7.5 TJ = 25C 6.5 35 45 40
Fig. 6. Input Admittance
TJ = - 40C 25C 125C
IC - Amperes
5.5
30 25 20 15 10 5
VCE - Volts
4.5
I
C
= 40A
3.5 10A 2.5
20A
1.5 5 6 7 8 9 10 11 12 13 14 15
0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
VGE - Volts
VGE - Volts
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXGA20N120A3 IXGP20N120A3 IXGH20N120A3
Fig. 7. Transconductance
16 TJ = - 40C 14 12 25C 125C 14 12 VCE = 600V I C = 20A I G = 10 mA 16
Fig. 8. Gate Charge
g f s - Siemens
8 6 4 2 0 0 5 10 15 20 25 30 35 40 45
VGE - Volts
10
10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 50
IC - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
10,000 45 40 Cies 1,000 35 30
Fig. 10. Reverse-Bias Safe Operating Area
f = 1MHz Capacitance - PicoFarads
IC - Amperes
25 20 15 10 TJ = 125C RG = 10 dv / dt < 10V / ns
Coes 100
Cres 10 0 5 10 15 20 25 30 35 40
5 0 200
300
400
500
600
700
800
900
1000
1100
1200
VCE - Volts
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VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
Z(th)JC - C / W
0.10
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGA20N120A3 IXGP20N120A3 IXGH20N120A3
Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance
26 24 22 Eoff VCE = 960V Eon 20 24 22 20 18 Eoff VCE = 960V Eon
Fig. 13. Inductive Switching Energy Loss vs. Collector Current
12 18 16
---
----
11 10 9 8
TJ = 125C , VGE = 15V
RG = 10 , VGE = 15V
E on - MilliJoules
Eoff - MilliJoules
Eoff - MilliJoules
20 18 16 14 12 10 8 10 15 20 25 30 35 40 45 50 I C = 20A I
C
14 = 40A 12 10 8 6 4 2
E on - MilliJoules
16 14 12 10 8 6 4 20 22 24 26 28 30 32 34 36 38 40 TJ = 25C TJ = 125C
7 6 5 4 3 2
RG - Ohms
IC - Amperes
Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature
22 20 18 16 Eoff VCE = 960V Eon 11 1700 1600 1500 1400
Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance
700 10 9
----
RG = 10 , VGE = 15V
tfi
VCE = 960V
td(off) - - - -
650 600 550 I
C
TJ = 125C, VGE = 15V = 20A
t d(off) - Nanoseconds
t f - Nanoseconds
8 I C = 40A 7 6 5 4 I C = 20A 3 2 1 125
E on - MilliJoules
Eoff - MilliJoules
14 12 10 8 6 4 2 25 35 45 55 65 75
1300 1200 1100 1000 900 800 700 600 10 15 20 25 30 I
C
500 450 400 350
= 40A
300 250 200 150 35 40 45 50
85
95
105
115
TJ - Degrees Centigrade
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RG - Ohms
Fig. 16. Inductive Turn-off Switching Times vs. Collector Current
1400 1300 1200 360 1400 1300 1200
Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature
350 350 340
tfi
VCE = 960V
td(off) - - - -
tfi
VCE = 960V
td(off) - - - -
340 330 320
RG = 10 , VGE = 15V
RG = 10 , VGE = 15V
t d(off) - Nanoseconds
t d(off) - Nanoseconds
t f i - Nanoseconds
t f i - Nanoseconds
1100 1000 900 800 700 600 20 22 24 26 28 30 32 34 36 38 40 TJ = 25C TJ = 125C
330 320 310 300 290 280
1100 1000 900 800 700 600 25 35 45 55 65 75 85 95 105 115 I = 20A I C = 40A
C
310 300 290 280 270 125
IC - Amperes
TJ - Degrees Centigrade
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXGA20N120A3 IXGP20N120A3 IXGH20N120A3
Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance
200 180 160 55 160 140 120
Fig. 19. Inductive Turn-on Switching Times vs. Collector Current
23 50 45
tri
VCE = 960V
td(on) - - - -
tri
VCE = 960V
td(on) - - - -
22 21 20
TJ = 125C, VGE = 15V
RG = 10 , VGE = 15V
t d(on) - Nanoseconds
t d(on) - Nanoseconds
t r i - Nanoseconds
t r i - Nanoseconds
140 120 100 80 60 40 20 0 10
40 35 I
C
100 80 60 40 20 0 20 22 24 26 28 30 32 34 36 38 40 TJ = 125C
= 40A
30 I
C
19 TJ = 25C 18 17 16 15
= 20A
25 20 15 10 5
15
20
25
30
35
40
45
50
RG - Ohms
IC - Amperes
Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature
160 140 120 100 80 60 40 20 25 35 45 55 65 75 85 95 105 115 28
tri
VCE = 960V
td(on) - - - -
RG = 10 , VGE = 15V
26 24 22 20 18 16 14 125
t d(on) - Nanoseconds
t r i - Nanoseconds
I C = 40A
I
C
= 20A
TJ - Degrees Centigrade
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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_20N120A3(4L)10-01-08

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